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MBE (Molecular Beam Epitaxy)
Our MBE system consists of:
- Growth Chamber:
8 thermal evaporation sources
and linear 4 pocket e-gun
Reflection High Energy Electron
Diffraction
Residual Gas Analyzer unit
Thickness monitor
- Analysis Chamber:
Low Energy Electron Diffraction
units
Auger Electron Spectroscopy
and Ion Sputtering units
- k-Space Associate CCD Camera system (KSA400) for data acquisition
of diffraction images
- Base pressure of 10-10 Torr
- Sophisticated sample manipulator with five degrees of freedom
operating at 150-1000 K
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