Molecular Beam Epitaxy System

Molecular Beam Epitaxy
Specifications
  • Growth Chamber:
    • 8 thermal evaporation sources and linear 4 pocket e-gun
    • Reflection High Energy Electron Diffraction
    • Residual Gas Analyzer unit
    • Thickness monitor
  • Analysis Chamber:
    • Low Energy Electron Diffraction units
    • Auger Electron Spectroscopy and Ion Sputtering units
  • k-Space Associate CCD Camera system (KSA400) for data acquisition of diffraction images
  • Base pressure of 10-10 Torr
  • Sophisticated sample manipulator with five degrees of freedom operating at 150-1000 K